The company addresses a large unmet medical need for low dose X-ray medical applications and brings deep expertise in the areas of:
- compounds with ultra-high sensitivity
- manufacturing methods including a direct bonding technology and the epitaxial growth of defect-free silicon-germanium absorber structures on silicon.
For applications requiring low-energy X-ray beams, pixel detectors with silicon (Si) sensors are now considered as the best technology available. By adding semiconductors with higher atomic number such as germanium (Ge), it is possible to substantially increase their sensitivity at energy ranges suitable for the medical sector.
Recently, the feasibility of growing Ge layers thick enough for efficient X-ray detection on CMOS processed Si wafers could be demonstrated. This breakthrough allows ultra-high-sensitivity paired with an excellent energy and micrometric resolution. It may also be considered as a key enabler to improved and safer X-ray medical imaging procedures, particularly in the field of mammography. Based on these scientific advances, G-ray’s business model provides a vertically integrated technology offering to customers, from the epitaxial growth of SiGe alloys -or alternative high-Z materials- to finished products or detectors, including software, electronics and application specific integrated circuits. The new technology – including software-defined virtualized detectors – has an open architecture configurable for any equipment already in use. This pixel array detector of a new kind allows energy-resolved X-ray imaging, ultra-high-speed image capture and storage, modulated frame rate, zooming and streaming.
G-ray Disruptive Techniques
- Direct Ge growth on CMOS processed silicon wafers
- New interconnect technique (no bump bonding)
- New photodiodes for X-rays
Germanium demonstrates superior physics.
High sensitivity ➞ excellent energy and spatial resolution
Through the combination of the best available technologies, this new type of sensor has unique advantages in terms of spatial, energy and temporal resolution over all present bump-bonded detectors based on planar Si, CdTe or CdZnTe absorbers, as well as the monolithically integrated Si absorbers.